Defect-Mediated Room Temperature Ferromagnetism in Lead-Free Ferroelectric Na0.5Bi0.5TiO3 Materials

The injection of ferromagnetism properties to ferroelectric materials is a feasible strategy for integrating new functionalities to create next-generation electronic devices. In this study, Ni-doped lead-free ferroelectric Na 0.5 Bi 0.5 TiO 3 materials were synthesized using the sol-gel method. The...

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Veröffentlicht in:Journal of superconductivity and novel magnetism 2020-04, Vol.33 (4), p.911-920
Hauptverfasser: Dung, D. D., Dung, N. Q., Doan, N. B., Linh, N. H., Bac, L. H., Trung, N. N., Duc, N. V., Thanh, L.T. H., Cuong, L. V., Thiet, D. V., Cho, S.
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Sprache:eng
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Zusammenfassung:The injection of ferromagnetism properties to ferroelectric materials is a feasible strategy for integrating new functionalities to create next-generation electronic devices. In this study, Ni-doped lead-free ferroelectric Na 0.5 Bi 0.5 TiO 3 materials were synthesized using the sol-gel method. The optical band gap was reduced from 3.12 eV to 2.23 eV for un-doped and 9 mol% Ni-doped Na 0.5 Bi 0.5 TiO 3 materials, respectively, when Ni was substituted at the Ti site. The Ni-doped Na 0.5 Bi 0.5 TiO 3 materials exhibited ferromagnetism at room temperature. The maximum magnetization was found to be 0.91 μ B /Ni. Our work offers insight into the role of transition metals in room temperature ferromagnetism in lead-free ferroelectric materials for the creation of new types of green multiferroic materials.
ISSN:1557-1939
1557-1947
DOI:10.1007/s10948-019-05399-9