Specialized Study on Morphological Features of Tungsten Carbide Thin Film Synthesis by HFCVD

Tungsten carbide (WC) thin film was fabricated by the hot filament chemical vapor deposition method for 10 min as time deposition at the substrate temperature of 400 and 600 °C, under vacuum in the atmospheres of 95 % argon and 5 % methane gas mixture. In this work, the substrate temperature dependence of the WC properties was discussed. X-ray diffraction was used to identify the growth of structural properties of WC thin film on the Si (100) substrate. In order to investigate the morphological features of samples; raman scattering, field emission scanning electron microscopy and cross-sectional scanning electron microscopy (cross-sectional SEM) were used. Atomic force microscopy, mountains map premium (64-bit version) and Gwyddion software analysis were also used for further investigation. In this study, the analysis of the Minkowski functionals, the motifs, the depth histograms, the statistical parameters, the texture direction and the peak count histograms of the nanostructure surface of samples were implemented. According to the analyses, the WC films had a good crystal quality without any deformity and a low residual stress. The results of this study can accurately be used for a better comprehension of the WC thin film structures and characteristics.