Dependence of {111}-textured Pt electrode properties on TiO2 seed layers formed by thermal oxidation
The Pt/TiO 2 /SiO 2 /Si electrode structure prepared using sputter deposition of Ti, conversion of Ti to TiO 2 by thermal oxidation, and sputter deposition of Pt was evaluated by using measurements of sheet resistance and X-ray diffraction. Nonlinearity of the reciprocal sheet resistance dependence...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2018, Vol.29 (1), p.412-426 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The Pt/TiO
2
/SiO
2
/Si electrode structure prepared using sputter deposition of Ti, conversion of Ti to TiO
2
by thermal oxidation, and sputter deposition of Pt was evaluated by using measurements of sheet resistance and X-ray diffraction. Nonlinearity of the reciprocal sheet resistance dependence on thickness revealed a change in the Ti conductivity that was attributed to a change in the Ti microstructure. Upon conversion to TiO
2
, it was determined that TiO
2
exhibits a critical thickness of 32 nm that minimizes normal strain and {100}-textured misorientation and correlates with the onset of the Ti reciprocal sheet resistance nonlinearity. Both the TiO
2
{100}-strain and {100}-texture directly affects the {111}-textured growth of Pt deposited at 500 °C. Pt deposited onto TiO
2
films with the critical thickness of 32 nm exhibits a maximization of the normal strain relative to bulk Pt and also displays the narrowest distribution of Pt {111}-textured grain misalignment. The results presented show how Ti deposition conditions, TiO
2
anneal conditions, and TiO
2
thickness combine to modify the Pt electrode structural properties. Additionally, the measurement techniques demonstrated for the Ti, TiO
2
, and Pt are applicable to process control monitoring as well as standardized comparison of electrode structures used in integrated piezoelectric and ferroelectric devices. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-017-7930-2 |