Effect of annealing at oxygen partial pressure on the conductivity of Ni0.5Mn2.5O4 oxides
This paper presents a study of the electrical properties of nickel manganite Ni 0.5 Mn 2.5 O 4− x as a function of annealing at oxygen partial pressure. The crystalline phase of manganite ceramics during annealing at oxygen partial pressure was investigated using X-ray diffraction; the predominant p...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2015-06, Vol.26 (6), p.4172-4177 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This paper presents a study of the electrical properties of nickel manganite Ni
0.5
Mn
2.5
O
4−
x
as a function of annealing at oxygen partial pressure. The crystalline phase of manganite ceramics during annealing at oxygen partial pressure was investigated using X-ray diffraction; the predominant phase was tetragonal spinel. The electrical properties were analyzed by measuring resistance–temperature characteristics. The activation energy for electron hopping, determined using the slope of the ln
ρ
–1/T plots, was higher for samples annealed at lower oxygen partial pressure. The Mn
4+
/Mn
3+
ratio, obtained through differential thermal analysis, increased with an increase in the oxygen partial pressure during annealing. The relationship between resistivity and the Mn
4+
/Mn
3+
ratio during annealing at oxygen partial pressure was investigated. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-015-2962-y |