Effect of annealing at oxygen partial pressure on the conductivity of Ni0.5Mn2.5O4 oxides

This paper presents a study of the electrical properties of nickel manganite Ni 0.5 Mn 2.5 O 4− x as a function of annealing at oxygen partial pressure. The crystalline phase of manganite ceramics during annealing at oxygen partial pressure was investigated using X-ray diffraction; the predominant p...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2015-06, Vol.26 (6), p.4172-4177
Hauptverfasser: Hu, Chia-Jung, Hu, Yi, Nien, C.-Y., Liu, Tung-Cheng
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Sprache:eng
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Zusammenfassung:This paper presents a study of the electrical properties of nickel manganite Ni 0.5 Mn 2.5 O 4− x as a function of annealing at oxygen partial pressure. The crystalline phase of manganite ceramics during annealing at oxygen partial pressure was investigated using X-ray diffraction; the predominant phase was tetragonal spinel. The electrical properties were analyzed by measuring resistance–temperature characteristics. The activation energy for electron hopping, determined using the slope of the ln  ρ –1/T plots, was higher for samples annealed at lower oxygen partial pressure. The Mn 4+ /Mn 3+ ratio, obtained through differential thermal analysis, increased with an increase in the oxygen partial pressure during annealing. The relationship between resistivity and the Mn 4+ /Mn 3+ ratio during annealing at oxygen partial pressure was investigated.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-015-2962-y