Influence of sintering temperature on thermoelectric properties of Bi2Te3/Polythiophene composite materials

Bi 2 Te 3 /Polythiophene (PTH) thermoelectric bulk composite materials were prepared by a two-step method. Firstly, Bi 2 Te 3 and PTH nanopowders were prepared by hydrothermal synthesis and chemical oxidative polymerization, respectively. Secondly, the mixture of the Bi 2 Te 3 and PTH nanopowders (5...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science. Materials in electronics 2012-04, Vol.23 (4), p.870-876
Hauptverfasser: Du, Yong, Cai, Kefeng F., Shen, Shirley Z., An, Baijun, Qin, Zhen, Casey, Philip S.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Bi 2 Te 3 /Polythiophene (PTH) thermoelectric bulk composite materials were prepared by a two-step method. Firstly, Bi 2 Te 3 and PTH nanopowders were prepared by hydrothermal synthesis and chemical oxidative polymerization, respectively. Secondly, the mixture of the Bi 2 Te 3 and PTH nanopowders (50:50 wt) was pressed under vacuum at 80 MPa and 298, 473, or 623 K. For comparison, Bi 2 Te 3 powders were hot pressed at 623 K. The bulk materials were analyzed by conventional methods, such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy, thermogravimetric analysis (TGA) and field emission scanning electron microscopy equipped with electron dispersive X-ray spectroscopy. The XRD and TGA results showed that the PTH decomposed when the hot pressing temperature exceeded 473 K, and Bi 2 Te 2 S phase was formed. The thermoelectric properties of the bulk composite materials were investigated. The composite pressed at 623 K showed a higher power factor, ~2.54 μ Wm −1  K −2 at 473 K, which is as ~20 times as that of the composite pressed at 473 K, although, it is still much lower than that of the pressed Bi 2 Te 3 material (~1,266 μ Wm −1  K −2 at 348 K).
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-011-0509-4