Fully integrated inductive ring oscillators operating at VDD below 2kT/q

This paper presents two fully integrated inductive ring oscillators that operate with supply voltages below 2 kT/q for energy harvesting applications. Expressions for the oscillation frequency as well as the minimum transistor gain and supply voltage required for the starting up of oscillations are...

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Veröffentlicht in:Analog integrated circuits and signal processing 2015, Vol.82 (1), p.5-15
Hauptverfasser: Machado, Marcio Bender, Schneider, Marcio Cherem, Galup-Montoro, Carlos
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents two fully integrated inductive ring oscillators that operate with supply voltages below 2 kT/q for energy harvesting applications. Expressions for the oscillation frequency as well as the minimum transistor gain and supply voltage required for the starting up of oscillations are derived for each topology. The experimental results for two cross-coupled oscillators, with topologies comprised of a single-inductor and two-inductors per stage, are presented. The two oscillators operate with supply voltages as low as V DD  = 46 mV at 11.5 µW DC power and V DD  = 31 mV at 15 µW DC power, respectively, thus confirming the extremely low voltage operation of the prototypes integrated in a 130 nm technology.
ISSN:0925-1030
1573-1979
DOI:10.1007/s10470-014-0440-8