A 2.488–11.2 Gb/s SerDes in 40 nm low-leakage CMOS with multi-protocol compatibility for FPGA applications

This paper presents the design and Silicon verification of a 2.488–11.2 Gbps multi-standard SerDes transceiver in a 40 nm low-leakage CMOS process. The paper explores the architectural and circuit techniques used to meet the stringent requirements of the high-speed SerDes and to mitigate the perform...

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Veröffentlicht in:Analog integrated circuits and signal processing 2014-02, Vol.78 (2), p.259-273
Hauptverfasser: Vamvakos, Socrates D., Gauthier, Claude R., Rao, Chethan, Wang, Alvin, Canagasaby, Karthisha Ramoshan, Abugharbieh, Khaldoon, Choudhary, Prashant, Dabral, Sanjay, Desai, Shaishav, Hassan, Mahmudul, Hsieh, K. C., Kleveland, Bendik, Mandal, Gurupada, Rouse, Richard, Saraf, Ritesh, Yeung, Jason, Cao, Ying
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Sprache:eng
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Zusammenfassung:This paper presents the design and Silicon verification of a 2.488–11.2 Gbps multi-standard SerDes transceiver in a 40 nm low-leakage CMOS process. The paper explores the architectural and circuit techniques used to meet the stringent requirements of the high-speed SerDes and to mitigate the performance impact of the low-leakage process. A system modeling approach is described, which is used for optimizing the architectural trade-offs. The transceiver makes use of a low-jitter LC phase locked loop to enable high-reliability system design. The design has 420 fs RJ rms and consumes 30.1 mW/Gbps at 11.2 Gbps.
ISSN:0925-1030
1573-1979
DOI:10.1007/s10470-013-0172-1