Analytics of CVD processes in the deposition of SiC by methyltrichlorosilane
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| Veröffentlicht in: | Mikrochimica acta (1966) 2000-01, Vol.133 (1-4), p.209-214 |
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| container_end_page | 214 |
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| container_issue | 1-4 |
| container_start_page | 209 |
| container_title | Mikrochimica acta (1966) |
| container_volume | 133 |
| creator | HEINRICH, J HEMELTJEN, S MARX, G |
| description | |
| doi_str_mv | 10.1007/s006040070095 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0026-3672 |
| ispartof | Mikrochimica acta (1966), 2000-01, Vol.133 (1-4), p.209-214 |
| issn | 0026-3672 1436-5073 |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_s006040070095 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Analytical chemistry Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Spectrometric and optical methods |
| title | Analytics of CVD processes in the deposition of SiC by methyltrichlorosilane |
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