Analytical model and analysis of RF MEMS switch for Ka-band applications

This paper aims to develop an RF MEMS shunt switch with low actuation voltage and improved RF performance at high-frequency applications. Here we have developed two beam structures for the analysis of electromechanical and electromagnetic parameters using COMSOL and HFSS software. The pull-in voltage of each beam is calculated as 5.8 V for beam-1 and 3.6 V for beam-2, the simulated results are compared with the theoretical results with the analytical model equations. The capacitance analysis of the proposed switch is 11.09 fF, 4.61 pF and the switching time is 6.2 µs. Capacitance is a key parameter to obtain good RF performance, the return and insertion loss of the proposed beam structures are − 35.29 dB, − 42.95 dB, − 0.76 dB, − 0.87 dB, and the isolation is obtained as − 21.02 dB, − 22.34 dB at 20 GHz and 41.21 GHz. The switch can be utilized in high-frequency communication systems such as point-to-point microwave links, satellite communication systems, and 5G wireless networks to improve signal routing and frequency tuning.