Ge4Sb1Te5 device case study for NVRAM applications

Ge4Sb1Te5 device case study for NVRAM applications

In this paper, the characterization of Ge 4 Sb 1 Te 5 thin film device with 110 nm and 140 nm thickness was conducted. Fabrication was done using physical vapor deposition technique. The switching from amorphous to crystalline state is studied using electrical studies, whereas the Raman studies expl...

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Veröffentlicht in:Microsystem technologies : sensors, actuators, systems integration actuators, systems integration, 2019-12, Vol.25 (12), p.4609-4613
Hauptverfasser: Shylashree, N., Sangeetha, B. G., Thonse, Adithya, Nath, Vijay
Format: Artikel
Sprache:eng
Schlagworte:
Electronics and Microelectronics
Engineering
Instrumentation
Mechanical Engineering
Nanotechnology
Technical Paper
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Zusammenfassung:In this paper, the characterization of Ge 4 Sb 1 Te 5 thin film device with 110 nm and 140 nm thickness was conducted. Fabrication was done using physical vapor deposition technique. The switching from amorphous to crystalline state is studied using electrical studies, whereas the Raman studies explains the structure of the film. The switching of the device is analyzed by current–voltage, resistance–voltage characteristics. Device endurance verifies this as an appropriate choice in the field of memory applications.
ISSN:0946-7076
1432-1858
DOI:10.1007/s00542-019-04451-x