Label free electrical detection of prostate specific antigen with millimeter grade biomolecule-gated AlGaN/GaN high electron mobility transistors
AlGaN/GaN high electron mobility transistor (HEMT) was successfully fabricated by complementary metal-oxide semiconductor field effect transistor-compatible fabrication method, and the label-free, electrical detection of prostate specific antigen in real time using the biomolecule-gate AlGaN/GaN HEM...
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Veröffentlicht in: | Microsystem technologies : sensors, actuators, systems integration actuators, systems integration, 2015-07, Vol.21 (7), p.1489-1494 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | AlGaN/GaN high electron mobility transistor (HEMT) was successfully fabricated by complementary metal-oxide semiconductor field effect transistor-compatible fabrication method, and the label-free, electrical detection of prostate specific antigen in real time using the biomolecule-gate AlGaN/GaN HEMT sensor was presented. It shows a rapid response when target prostate biomarker in buffer solution was added to the antibody-immobilized sensing area. The linear range for target prostate specific antigen detection has been demonstrated from 0.1 pg/ml to 10.269 ng/ml and a low detection below 0.1 pg/ml level is estimated, which is the best result of AlGaN/GaN HEMT biosensor for prostate specific antigen (PSA) detection till now. The sensitivity of 0.027 % is determined for 0.1 pg/ml prostate specific antigen solution. The electrical result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for the prostate cancer screening. |
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ISSN: | 0946-7076 1432-1858 |
DOI: | 10.1007/s00542-014-2303-8 |