High temperature stability of electrically conductive Pt–Rh/ZrO2 and Pt–Rh/HfO2 nanocomposite thin film electrodes
Nanocomposite films made up of either Pt–Rh/ZrO 2 or Pt–Rh/HfO 2 materials were co-deposited using multiple e-beam evaporation sources onto langasite (La 3 Ga 5 SiO 14 ) substrates, both as blanket films and as patterned interdigital transducer electrodes for surface acoustic wave sensor devices. Th...
Gespeichert in:
Veröffentlicht in: | Microsystem technologies 2014-04, Vol.20 (4-5), p.523-531 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Nanocomposite films made up of either Pt–Rh/ZrO
2
or Pt–Rh/HfO
2
materials were co-deposited using multiple e-beam evaporation sources onto langasite (La
3
Ga
5
SiO
14
) substrates, both as blanket films and as patterned interdigital transducer electrodes for surface acoustic wave sensor devices. The films and devices were tested after different thermal treatments in a tube furnace up to 1,200 °C. X-ray diffraction and electron microscopy results indicate that Pt–Rh/HfO
2
films are stabilized by the formation of monoclinic HfO
2
precipitates after high temperature exposure, which act as pinning sites to retard grain growth and prevent agglomeration of the conductive cubic Pt–Rh phase. The Pt–Rh/ZrO
2
films were found to be slightly less stable, and contain both tetragonal and monoclinic ZrO
2
precipitates that also helps prevent Pt–Rh agglomeration. Film conductivities were measured versus temperature for Pt–Rh/HfO
2
films on a variety of substrates, and it was concluded that La and/or Ga diffusion from the langasite substrate into the nanocomposite films is detrimental to film stability. An Al
2
O
3
diffusion barrier grown on langasite using atomic layer deposition was found to be more effective than a SiAlON barrier layer in minimizing interdiffusion between the nanocomposite film and the langasite crystal at temperatures above 1,000 °C. |
---|---|
ISSN: | 0946-7076 1432-1858 |
DOI: | 10.1007/s00542-013-1974-x |