High temperature stability of electrically conductive Pt–Rh/ZrO2 and Pt–Rh/HfO2 nanocomposite thin film electrodes

Nanocomposite films made up of either Pt–Rh/ZrO 2 or Pt–Rh/HfO 2 materials were co-deposited using multiple e-beam evaporation sources onto langasite (La 3 Ga 5 SiO 14 ) substrates, both as blanket films and as patterned interdigital transducer electrodes for surface acoustic wave sensor devices. Th...

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Veröffentlicht in:Microsystem technologies 2014-04, Vol.20 (4-5), p.523-531
Hauptverfasser: Moulzolf, Scott C., Frankel, David J., Pereira da Cunha, Mauricio, Lad, Robert J.
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Sprache:eng
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Zusammenfassung:Nanocomposite films made up of either Pt–Rh/ZrO 2 or Pt–Rh/HfO 2 materials were co-deposited using multiple e-beam evaporation sources onto langasite (La 3 Ga 5 SiO 14 ) substrates, both as blanket films and as patterned interdigital transducer electrodes for surface acoustic wave sensor devices. The films and devices were tested after different thermal treatments in a tube furnace up to 1,200 °C. X-ray diffraction and electron microscopy results indicate that Pt–Rh/HfO 2 films are stabilized by the formation of monoclinic HfO 2 precipitates after high temperature exposure, which act as pinning sites to retard grain growth and prevent agglomeration of the conductive cubic Pt–Rh phase. The Pt–Rh/ZrO 2 films were found to be slightly less stable, and contain both tetragonal and monoclinic ZrO 2 precipitates that also helps prevent Pt–Rh agglomeration. Film conductivities were measured versus temperature for Pt–Rh/HfO 2 films on a variety of substrates, and it was concluded that La and/or Ga diffusion from the langasite substrate into the nanocomposite films is detrimental to film stability. An Al 2 O 3 diffusion barrier grown on langasite using atomic layer deposition was found to be more effective than a SiAlON barrier layer in minimizing interdiffusion between the nanocomposite film and the langasite crystal at temperatures above 1,000 °C.
ISSN:0946-7076
1432-1858
DOI:10.1007/s00542-013-1974-x