Chip-level integration of RF MEMS on-chip inductors using UV-LIGA technique
This paper presents a chip-level integration of radio-frequency (RF) microelectromechanical systems (MEMS) air-suspended circular spiral on-chip inductors onto MOSIS RF circuit chips of LNA and VCO using a multi-layer UV-LIGA technique including SU-8 UV lithography and copper electroplating. A high...
Gespeichert in:
Veröffentlicht in: | Microsystem technologies 2008-10, Vol.14 (9-11), p.1429-1438 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | This paper presents a chip-level integration of radio-frequency (RF) microelectromechanical systems (MEMS) air-suspended circular spiral on-chip inductors onto MOSIS RF circuit chips of LNA and VCO using a multi-layer UV-LIGA technique including SU-8 UV lithography and copper electroplating. A high frequency simulation package, HFSS, was used to determine the layout of MEMS on-chip inductors with inductance values close to the target inductance values required for the RF circuit chips within the range of 10%. All MEMS on-chip inductors were successfully fabricated using a contrast enhancement method for 50 μm air suspension without any physical deformations. High frequency measurement and modeling of the integrated inductors revealed relatively high quality factors over 10 and self-resonant frequencies more than 15 GHz for a 1.44 nH source inductor and a 3.14 nH drain inductor on low resistivity silicon substrates (0.014 Ω cm). The post-IC integration of RF MEMS on-chip inductors onto RF circuit chips at a chip scale using a multi-layer UV-LIGA technique along with high frequency measurement and modeling demonstrated in this work will open up new avenues with the wider integration feasibility of MEMS on-chip inductors in RF applications for cost-effective prototype applications in small laboratories and businesses. |
---|---|
ISSN: | 0946-7076 1432-1858 |
DOI: | 10.1007/s00542-007-0532-9 |