Usage of porous Al2O3 layers for RH sensing

Capacitive sensors prepared by microelectronic technology are based on dielectric property changes of thin films upon water vapor uptake, which depends on the surrounding media’s relative humidity content. One of the dielectrics to be used is porous Al 2 O 3 , obtained by electrochemical oxidation o...

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Veröffentlicht in:	Microsystem technologies 2008-07, Vol.14 (7), p.1081-1086
Hauptverfasser:	Timár-Horváth, Veronika, Juhász, László, Vass-Várnai, András, Perlaky, Gergely
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Electronics and Microelectronics Engineering Exact sciences and technology Instrumentation Instruments, apparatus, components and techniques common to several branches of physics and astronomy Mechanical Engineering Mechanical engineering. Machine design Mechanical instruments, equipment and techniques Microelectronic fabrication (materials and surfaces technology) Micromechanical devices and systems Nanotechnology Physics Piezoelectricity and electromechanical effects Precision engineering, watch making Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Technical Paper
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Zusammenfassung:	Capacitive sensors prepared by microelectronic technology are based on dielectric property changes of thin films upon water vapor uptake, which depends on the surrounding media’s relative humidity content. One of the dielectrics to be used is porous Al 2 O 3 , obtained by electrochemical oxidation of aluminum under anodic bias. In this paper a sensitive, fast and cheap capacitive sensor has been described and investigated.
ISSN:	0946-7076 1432-1858
DOI:	10.1007/s00542-007-0466-2