Tellurium and sulfur doped GaSe for mid-IR applications

Tellurium and sulfur doped GaSe for mid-IR applications

Centimeter-sized Te:GaSe (≤10 mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like ε -GaSe. Te:GaSe (≤2 mass%) crystals were suitable fo...

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Veröffentlicht in:Applied physics. B, Lasers and optics Lasers and optics, 2012-09, Vol.108 (3), p.545-552
Hauptverfasser: Kang, Z.-H., Guo, J., Feng, Z.-S., Gao, J.-Y., Xie, J.-J., Zhang, L.-M., Atuchin, V., Andreev, Y., Lanskii, G., Shaiduko, A.
Format: Artikel
Sprache:eng
Schlagworte:
Engineering
Lasers
Optical Devices
Optics
Photonics
Physical Chemistry
Physics
Physics and Astronomy
Quantum Optics
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Zusammenfassung:Centimeter-sized Te:GaSe (≤10 mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like ε -GaSe. Te:GaSe (≤2 mass%) crystals were suitable for non-linear applications. The optimal Te-doping level between 0.1 and 0.5 mass% has been clearly observed in CO 2 laser SHG experiment. The CO 2 laser SHG efficiency in Te:GaSe (0.1–0.5 mass%) is ∼20 % higher than that of GaSe due to better optical quality. Phase matching conditions in Te-doped crystals have been shown to be identical with those of GaSe.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-012-5067-9