Controlling ZnO nanowire surface density during its growth by altering morphological properties of a ZnO buffer layer by UV laser irradiation

Zinc oxide (ZnO) nanocrystals, which are characterized by their configurations and fine structures, are unique oxide semiconductors. In this report, it is demonstrated that the number density of ZnO nanowires can be controlled by proper treatments of the buffer layer with ultraviolet laser irradiati...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2015-03, Vol.118 (4), p.1239-1246
Hauptverfasser: Shimogaki, Tetsuya, Kawahara, Hirotaka, Nakao, Shihomi, Higashihata, Mitsuhiro, Ikenoue, Hiroshi, Nakata, Yoshiki, Nakamura, Daisuke, Okada, Tatsuo
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Sprache:eng
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Zusammenfassung:Zinc oxide (ZnO) nanocrystals, which are characterized by their configurations and fine structures, are unique oxide semiconductors. In this report, it is demonstrated that the number density of ZnO nanowires can be controlled by proper treatments of the buffer layer with ultraviolet laser irradiation. ZnO nanowires were synthesized on the locally laser-irradiated ZnO buffer layer using nanoparticle-assisted pulsed-laser deposition (NAPLD). The number density of ZnO nanowires decreased in the region laser-irradiated with
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8822-4