Improved electrical properties in La- and V-co-doped Na0.5Bi4.5Ti4O15 thin films

Ferroelectric La- and V-co-doped Na 0.5 Bi 4.5 Ti 4 O 15 (NLBTV) thin film was prepared on Pt(111)/Ti/SiO 2 /Si substrates by using a chemical solution deposition method and annealed at 750 °C under oxygen atmosphere. Crystal structure of the thin film was investigated by X-ray diffraction and Raman...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2012-08, Vol.108 (2), p.357-361
Hauptverfasser:	Do, Dalhyun, Kim, Jin Won, Kim, Sang Su
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed Matter Physics Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dielectrics, piezoelectrics, and ferroelectrics and their properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Ferroelectricity and antiferroelectricity Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Machines Manufacturing Materials science Methods of deposition of films and coatings film growth and epitaxy Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Surfaces and Interfaces Thin Films Treatment of materials and its effects on microstructure and properties
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Zusammenfassung:	Ferroelectric La- and V-co-doped Na 0.5 Bi 4.5 Ti 4 O 15 (NLBTV) thin film was prepared on Pt(111)/Ti/SiO 2 /Si substrates by using a chemical solution deposition method and annealed at 750 °C under oxygen atmosphere. Crystal structure of the thin film was investigated by X-ray diffraction and Raman scattering. Surface morphology of the thin film was investigated by scanning electron microscopy. The NLBTV thin film capacitor exhibited better ferroelectric properties such as larger remnant polarization and smaller coercive electric field than Na 0.5 Bi 4.5 Ti 4 O 15 (NBT) thin film capacitor. Reduced leakage current was observed in the NLBTV thin film capacitor compared to the NBT thin film capacitor. Almost no polarization fatigue was observed up to 1.44×10 10 switching cycles.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-012-6891-9