Wafer bonding of gallium arsenide on sapphire

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 1997-06, Vol.64 (6), p.533-537
Hauptverfasser:	KOPPERSCHMIDT, P, KÄSTNER, G, SENZ, S, HESSE, D, GÖSELE, U
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	537
container_issue	6
container_start_page	533
container_title	Applied physics. A, Materials science & processing
container_volume	64
creator	KOPPERSCHMIDT, P KÄSTNER, G SENZ, S HESSE, D GÖSELE, U
description
doi_str_mv	10.1007/s003390050512
format	Article
fullrecord	<record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1007_s003390050512</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2729825</sourcerecordid><originalsourceid>FETCH-LOGICAL-c264t-6cdfc365ed3c1c958b8384c05001b33075f5cfcf3f7f74faa42cfb6e77fd29193</originalsourceid><addsrcrecordid>eNpVj81LxDAUxIMoWFeP3nPwGn3Jy0dzlEVdYcGL4rGkad5a6bYl0YP_vZUVwbnM5TfDDGOXEq4lgLspAIgewICR6ohVUqMSYBGOWQVeO1Gjt6fsrJR3WKSVqph4DZQyb6ex68cdn4jvwjD0n3secklj3yU-jbyEeX7rczpnJxSGki5-fcVe7u-e1xuxfXp4XN9uRVRWfwgbO4poTeowyuhN3dZY67gMA9kigjNkIkVCcuQ0haBVpNYm56hTXnpcMXHojXkqJSdq5tzvQ_5qJDQ_X5t_Xxf-6sDPocQwUA5j7MtfSDnla2XwG2IrUp4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Wafer bonding of gallium arsenide on sapphire</title><source>SpringerLink Journals - AutoHoldings</source><creator>KOPPERSCHMIDT, P ; KÄSTNER, G ; SENZ, S ; HESSE, D ; GÖSELE, U</creator><creatorcontrib>KOPPERSCHMIDT, P ; KÄSTNER, G ; SENZ, S ; HESSE, D ; GÖSELE, U</creatorcontrib><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s003390050512</identifier><language>eng</language><publisher>Berlin: Springer</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Applied physics. A, Materials science & processing, 1997-06, Vol.64 (6), p.533-537</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c264t-6cdfc365ed3c1c958b8384c05001b33075f5cfcf3f7f74faa42cfb6e77fd29193</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2729825$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KOPPERSCHMIDT, P</creatorcontrib><creatorcontrib>KÄSTNER, G</creatorcontrib><creatorcontrib>SENZ, S</creatorcontrib><creatorcontrib>HESSE, D</creatorcontrib><creatorcontrib>GÖSELE, U</creatorcontrib><title>Wafer bonding of gallium arsenide on sapphire</title><title>Applied physics. A, Materials science & processing</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNpVj81LxDAUxIMoWFeP3nPwGn3Jy0dzlEVdYcGL4rGkad5a6bYl0YP_vZUVwbnM5TfDDGOXEq4lgLspAIgewICR6ohVUqMSYBGOWQVeO1Gjt6fsrJR3WKSVqph4DZQyb6ex68cdn4jvwjD0n3secklj3yU-jbyEeX7rczpnJxSGki5-fcVe7u-e1xuxfXp4XN9uRVRWfwgbO4poTeowyuhN3dZY67gMA9kigjNkIkVCcuQ0haBVpNYm56hTXnpcMXHojXkqJSdq5tzvQ_5qJDQ_X5t_Xxf-6sDPocQwUA5j7MtfSDnla2XwG2IrUp4</recordid><startdate>19970601</startdate><enddate>19970601</enddate><creator>KOPPERSCHMIDT, P</creator><creator>KÄSTNER, G</creator><creator>SENZ, S</creator><creator>HESSE, D</creator><creator>GÖSELE, U</creator><general>Springer</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970601</creationdate><title>Wafer bonding of gallium arsenide on sapphire</title><author>KOPPERSCHMIDT, P ; KÄSTNER, G ; SENZ, S ; HESSE, D ; GÖSELE, U</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c264t-6cdfc365ed3c1c958b8384c05001b33075f5cfcf3f7f74faa42cfb6e77fd29193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KOPPERSCHMIDT, P</creatorcontrib><creatorcontrib>KÄSTNER, G</creatorcontrib><creatorcontrib>SENZ, S</creatorcontrib><creatorcontrib>HESSE, D</creatorcontrib><creatorcontrib>GÖSELE, U</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KOPPERSCHMIDT, P</au><au>KÄSTNER, G</au><au>SENZ, S</au><au>HESSE, D</au><au>GÖSELE, U</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Wafer bonding of gallium arsenide on sapphire</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><date>1997-06-01</date><risdate>1997</risdate><volume>64</volume><issue>6</issue><spage>533</spage><epage>537</epage><pages>533-537</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><cop>Berlin</cop><pub>Springer</pub><doi>10.1007/s003390050512</doi><tpages>5</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0947-8396
ispartof	Applied physics. A, Materials science & processing, 1997-06, Vol.64 (6), p.533-537
issn	0947-8396 1432-0630
language	eng
recordid	cdi_crossref_primary_10_1007_s003390050512
source	SpringerLink Journals - AutoHoldings
subjects	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Wafer bonding of gallium arsenide on sapphire
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T03%3A29%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Wafer%20bonding%20of%20gallium%20arsenide%20on%20sapphire&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=KOPPERSCHMIDT,%20P&rft.date=1997-06-01&rft.volume=64&rft.issue=6&rft.spage=533&rft.epage=537&rft.pages=533-537&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s003390050512&rft_dat=%3Cpascalfrancis_cross%3E2729825%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true