Growth of high-quality GaSb by metalorganic vapor phase epitaxy
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Veröffentlicht in: | Journal of electronic materials 1995-11, Vol.24 (11), p.1691-1696 |
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container_issue | 11 |
container_start_page | 1691 |
container_title | Journal of electronic materials |
container_volume | 24 |
creator | KOLJONEN, T SOPANEN, M LIPSANEN, H TUOMI, T |
description | |
doi_str_mv | 10.1007/BF02676834 |
format | Article |
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identifier | ISSN: 0361-5235 |
ispartof | Journal of electronic materials, 1995-11, Vol.24 (11), p.1691-1696 |
issn | 0361-5235 1543-186X |
language | eng |
recordid | cdi_crossref_primary_10_1007_BF02676834 |
source | SpringerLink Journals - AutoHoldings |
subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vapor phase epitaxy growth from vapor phase |
title | Growth of high-quality GaSb by metalorganic vapor phase epitaxy |
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