High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 1994-02, Vol.23 (2), p.81-85
Hauptverfasser:	PERRIN, S. D, SELTZER, C. P, SPURDENS, P. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
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