Three dimensional devices fabricated by silicon epitaxial lateral overgrowth
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| Veröffentlicht in: | Journal of electronic materials 1990-10, Vol.19 (10), p.1111-1117 |
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| container_end_page | 1117 |
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| container_issue | 10 |
| container_start_page | 1111 |
| container_title | Journal of electronic materials |
| container_volume | 19 |
| creator | NEUDECK, G. W SCHUBERT, P. J GLENN, J. L FRIEDRICH, J. A KLAASEN, W. A ZINGG, R. P DENTON, J. P |
| description | |
| doi_str_mv | 10.1007/BF02651990 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1990-10, Vol.19 (10), p.1111-1117 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_BF02651990 |
| source | Springer Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Three dimensional devices fabricated by silicon epitaxial lateral overgrowth |
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