Avalanche multiplication of charge carriers in isotype GaAs-Ga1?xAlxAs n+-v-n heterojunctions
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| Veröffentlicht in: | Soviet Physics Journal 1978-06, Vol.21 (6), p.761-765 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 765 |
|---|---|
| container_issue | 6 |
| container_start_page | 761 |
| container_title | Soviet Physics Journal |
| container_volume | 21 |
| creator | Ptashenko, A. A. Timokhov, F. P. |
| description | |
| doi_str_mv | 10.1007/BF00936688 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0038-5697 |
| ispartof | Soviet Physics Journal, 1978-06, Vol.21 (6), p.761-765 |
| issn | 0038-5697 1573-9228 |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_BF00936688 |
| source | Springer Nature - Complete Springer Journals |
| title | Avalanche multiplication of charge carriers in isotype GaAs-Ga1?xAlxAs n+-v-n heterojunctions |
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