Decay of charged complexes in quasi-2D semiconductor structures in the presence of electric fields

An analytical approach to the problem of a charged and weakly bound complex in a quasi-two-dimensional semiconductor structure subject to an electric field is developed. Using the zero-range potential method the red shift of the energy level of the extra electron and the detachment rate of the complex, both induced by the electric field, are calculated and provided in an explicit form. It is shown that the 2D charged complex is far more stable than we take in the analogous system in the bulk semiconductor in the presence of the electric field. Explicit values for donors in InGaN layers are presented.