Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors

A self-consistent solution of Schrödinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulation-doped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the position dependent lattice constant and electron effective mass. The inclusion of these strain-related energy terms is shown to be paramount to achieve good agreement between theory and experimental data for theC–Vcharacteristics of pseudomorphic MODFETs at the forward bias range.