Excited states of donors bound toXvalleys in GaAs–AlAs type II structures

Excited states of donors bound toXvalleys in GaAs–AlAs type II structures

We calculate the binding energies of 2s donor states bound tovalleys in type II GaAs–AlAs quantum well structures using an anisotropic variational method which enables us to take into account the effective mass anisotropy and quantum confinement. For a comparative study, we use two sets of effective...

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Veröffentlicht in:Superlattices and microstructures 1998-05, Vol.23 (5), p.1075-1078
Hauptverfasser: Weber, G., Carneiro, G.N.
Format: Artikel
Sprache:eng
Schlagworte:
type–II superlattices, GaAs–AlAs, shallow impurity states, donors
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Zusammenfassung:We calculate the binding energies of 2s donor states bound tovalleys in type II GaAs–AlAs quantum well structures using an anisotropic variational method which enables us to take into account the effective mass anisotropy and quantum confinement. For a comparative study, we use two sets of effective masses obtained from different measurements [B. Rheinländeret al., Phys. Stat. Sol. (b)49, K167 (1972) and M. Goiranet al., Physica B177, 465 (1992)].
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0377