Temperature tuning of exciton–photon coupling in a microcavity grown on a (311)A GaAs substrate

We report on the observation of photon-exciton coupling in a MQW microcavity grown on a (311)A GaAs substrate by photoluminescence. This coupling or Rabi splitting was observed by tuning the heavy hole exciton line and the cavity mode by varying the temperature in the range 80–200 K.

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Veröffentlicht in:Superlattices and microstructures 1998-01, Vol.23 (1), p.181-186
Hauptverfasser: Matinaga, F.M., Cury, L.A., Valadares, E.C., Moreira, M.V.B., Rodrigues, W.N., de Oliveira, A.G., Vilela, J.M.C., Andrade, M.S., Sluss, J.A.
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Sprache:eng
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Zusammenfassung:We report on the observation of photon-exciton coupling in a MQW microcavity grown on a (311)A GaAs substrate by photoluminescence. This coupling or Rabi splitting was observed by tuning the heavy hole exciton line and the cavity mode by varying the temperature in the range 80–200 K.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0279