Radiation Hardness of Perovskite Solar Cells Based on Aluminum‐Doped Zinc Oxide Electrode Under Proton Irradiation

Perovskite solar cells (PSCs) have gained increasing interest for space applications. However, before they can be deployed into space, their resistance to ionizing radiations, such as high‐energy protons, must be demonstrated. Herein, the effect of 150 keV protons on the performance of PSCs based on aluminum‐doped zinc oxide (AZO) transparent conducting oxide (TCO) is investigated. A record power conversion efficiency of 15% and 13.6% is obtained for cells based on AZO under AM1.5G and AM0 illumination, respectively. It is demonstrated that PSCs can withstand proton irradiation up to 1013 protons cm−2 without significant loss in efficiency. From 1014 protons cm−2, a decrease in short‐circuit current of PSCs is observed, which is consistent with interfacial degradation due to deterioration of the Spiro‐OMeTAD holes transport layer during proton irradiation. The structural and optical properties of perovskite remain intact up to high fluence levels. Although shallow trap states are induced by proton irradiation in perovskite bulk at low fluence levels, charges are released efficiently and are not detrimental to the cell's performance. This work highlights the potential of PSCs based on AZO TCO to be used for space applications and gives a deeper understanding of interfacial degradation due to proton irradiation. Perovskite solar cells fabricated on aluminum‐doped zinc oxide (AZO)/quartz substrates are shown with a record efficiency of 15%, and their radiation hardness to 150 keV protons is presented. The cells show robust stability up to 1013 protons cm−2, with degradation at 1014 and 1015 protons ccm−2. Transient photovoltage measurements show an increase in minority carrier density and lifetime from 1012 protons cm−2.