Enhanced Sensitivity in Photovoltaic 2D MoS 2 /Te Heterojunction VOC Sensors

Volatile organic compound (VOC) sensors have a broad range of applications including healthcare monitoring, product quality control, and air quality management. However, many such applications are demanding, requiring sensors with high sensitivity and selectivity. 2D materials are extensively used i...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-12, Vol.20 (49), p.e2402464
Hauptverfasser: Mohammadzadeh, Mohammad Reza, Hasani, Amirhossein, Hussain, Tanveer, Ghanbari, Hamidreza, Fawzy, Mirette, Abnavi, Amin, Ahmadi, Ribwar, Kabir, Fahmid, De Silva, Thushani, Rajapakse, R K N D, Adachi, Michael M
Format: Artikel
Sprache:eng
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Zusammenfassung:Volatile organic compound (VOC) sensors have a broad range of applications including healthcare monitoring, product quality control, and air quality management. However, many such applications are demanding, requiring sensors with high sensitivity and selectivity. 2D materials are extensively used in many VOC sensing devices due to their large surface-to-volume ratio and fascinating electronic properties. These properties, along with their exceptional flexibility, low power consumption, room-temperature operation, chemical functionalization potential, and defect engineering capabilities, make 2D materials ideal for high-performance VOC sensing. Here, a 2D MoS /Te heterojunction is reported that significantly improves the VOC detection compared to MoS and Te sensors on their own. Density functional theory (DFT) analysis shows that the MoS /Te heterojunction significantly enhances the adsorption energy and therefore sensing sensitivity of the sensor. The sensor response, which denotes the percentage change in the sensor's conductance upon VOC exposure, is further enhanced under photo-illumination and zero-bias conditions to values up to ≈7000% when exposed to butanone. The MoS /Te heterojunction is therefore a promising device architecture for portable and wearable sensing applications.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202402464