Four-Bits-Per-Cell Operation in an HfO 2 -Based Resistive Switching Device

The quadruple-level cell technology is demonstrated in an Au/Al O /HfO /TiN resistance switching memory device using the industry-standard incremental step pulse programming (ISPP) and error checking/correction (ECC) methods. With the highly optimistic properties of the tested device, such as self-c...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2017-10, Vol.13 (40)
Hauptverfasser:	Kim, Gun Hwan, Ju, Hyunsu, Yang, Min Kyu, Lee, Dong Kyu, Choi, Ji Woon, Jang, Jae Hyuck, Lee, Sang Gil, Cha, Ik Su, Park, Bo Keun, Han, Jeong Hwan, Chung, Taek-Mo, Kim, Kyung Min, Hwang, Cheol Seong, Lee, Young Kuk
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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