First‐Principle Calculation of the Hydrogen Adsorption and Diffusion Characteristics at an Ni 3 Al/Ni Interface

The occurrence of hydrogen embrittlement often leads to significant fracturing in materials. Thus, a comprehensive understanding of the interactions of hydrogen and its effects on material properties is essential. In this study, first‐principle calculations based on density functional theory are con...

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Veröffentlicht in:Surface and interface analysis 2024-12, Vol.56 (12), p.832-841
Hauptverfasser: Du, Xiaoming, Li, Siyu, Li, Fu, Zhu, Guosong
Format: Artikel
Sprache:eng
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Zusammenfassung:The occurrence of hydrogen embrittlement often leads to significant fracturing in materials. Thus, a comprehensive understanding of the interactions of hydrogen and its effects on material properties is essential. In this study, first‐principle calculations based on density functional theory are conducted to investigate the adsorption and diffusion characteristics of hydrogen at the Ni/Ni 3 Al(γ/γ') interface of a Ni‐based single‐crystal superalloy. The results show that hydrogen can stably adsorb onto the γ/γ′ interface, nearby octahedral interstitial sites, and tetrahedral interstitial sites in the γ‐phase. Analysis of the density of states and charge density confirms that the hydrogen atoms formed covalent bonds and ionic bonds with nearby Al atoms. A transition state structure search based on linear synchronous transit (LST) and quadratic synchronous transit (QST) models is utilized to calculate the diffusion paths and energy barriers of the hydrogen atoms between the stable adsorption sites near the interface. In addition, the permeation characteristics of hydrogen atoms at the interface are analyzed. Furthermore, it is confirmed that hydrogen atoms entering the matrix from the interface preferentially occupy the positions of the regular octahedral interstitial sites, diffuse towards adjacent regular 6Ni octahedral interstitial sites through the inclined octahedral interstitial sites between the atomic layers, and converge at the interface.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.7351