High-resolution AES study of Ar+-irradiated graphite

High‐resolution AES (HR‐AES) has been used to study the electronic state of Ar+‐irradiated graphite in which the increase in the partial charge density caused by the lattice damage has been indicated. At doses of 1 × 1014 Ar+ cm−2 and the π + σ plasmon energy was decreased slightly at >1 × 1015 A...

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Veröffentlicht in:	Surface and interface analysis 2003-01, Vol.35 (1), p.19-23
Hauptverfasser:	Hashimoto, Hiroyuki, Watanabe, Masatoshi, Nishiuma, Satoru, Nakamura, Kumi, Yoshida, Shigeki
Format:	Artikel
Sprache:	eng
Schlagworte:	AES Ar+ irradiation Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) Collective excitations (including plasmons and other charge-density excitations) Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology highly oriented pyrolytic graphite (HOPG) Physics Surface and interface electron states Surface double layers, schottky barriers, and work functions work function π plasmon energy
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Zusammenfassung:	High‐resolution AES (HR‐AES) has been used to study the electronic state of Ar+‐irradiated graphite in which the increase in the partial charge density caused by the lattice damage has been indicated. At doses of 1 × 1014 Ar+ cm−2 and the π + σ plasmon energy was decreased slightly at >1 × 1015 Ar+ cm−2. The difference in the two energy variations in the range of 1 × 1014 to 1 × 1015 Ar+ cm−2 shows that the possibility of changes in the resonance energy and/or the lattice parameters is present if the π/σ electron ratio does not change. Copyright © 2003 John Wiley & Sons, Ltd.
ISSN:	0142-2421 1096-9918
DOI:	10.1002/sia.1486