Study of thin oxide films by ellipsometry and ARXPS

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (including native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses of >10 nm. When...

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Veröffentlicht in:	Surface and interface analysis 2002-08, Vol.34 (1), p.531-534
Hauptverfasser:	Tichopádek, P., Nebojsa, A., Čechal, J., Bábor, P., Jurkovič, P., Navrátil, K., Šikola, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	ARXPS Chemical composition analysis, chemical depth and dopant profiling Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Materials testing Physics spectroscopic ellipsometry Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology ultrathin films
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Zusammenfassung:	In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (including native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses of >10 nm. When the films become thinner, the results are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (
ISSN:	0142-2421 1096-9918
DOI:	10.1002/sia.1354