81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

We demonstrate high‐performance, coplanar polycrystalline InGaO (poly‐IGO) thin film transistors (TFTs) on polyimide (PI) substrate. The TFTs exhibit the saturation mobility (µSAT) of >45 cm 2 V -1 s -1 and very stable bias stress stabilities of negligible ΔVTH of +0.2 V and +0.1 V under PBTS and NBTS, respectively. A gate driver on the PI substrate is working well with a very low rising and falling time of less than 0.62 µs. Therefore, the flexible poly‐IGO TFTs could be used for high‐resolution foldable AMOLED display backplanes.