48‐3: In‐Ga‐Zn‐O Synaptic Transistor with 1 µm Channel Length for Neuromorphic Computing
In this paper, indium‐gallium‐zinc‐oxide synaptic transistors with different channel lengths ranging from 2 μm to 1 μm were demonstrated. Channel scaling effect on synaptic behaviors such as long‐term depression and long‐term potentiation was investigated. A spiking neural network simulation was con...
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Veröffentlicht in: | SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.699-702 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this paper, indium‐gallium‐zinc‐oxide synaptic transistors with different channel lengths ranging from 2 μm to 1 μm were demonstrated. Channel scaling effect on synaptic behaviors such as long‐term depression and long‐term potentiation was investigated. A spiking neural network simulation was conducted to verify our synaptic transistor with a channel length of 1 μm, achieving high classification accuracy of 98.05%. |
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ISSN: | 0097-966X 2168-0159 |
DOI: | 10.1002/sdtp.16655 |