48‐3: In‐Ga‐Zn‐O Synaptic Transistor with 1 µm Channel Length for Neuromorphic Computing

In this paper, indium‐gallium‐zinc‐oxide synaptic transistors with different channel lengths ranging from 2 μm to 1 μm were demonstrated. Channel scaling effect on synaptic behaviors such as long‐term depression and long‐term potentiation was investigated. A spiking neural network simulation was con...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.699-702
Hauptverfasser: Park, Junhyeong, Jang, Yuseong, Lee, Jinkyu, Lee, Soo-Yeon
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, indium‐gallium‐zinc‐oxide synaptic transistors with different channel lengths ranging from 2 μm to 1 μm were demonstrated. Channel scaling effect on synaptic behaviors such as long‐term depression and long‐term potentiation was investigated. A spiking neural network simulation was conducted to verify our synaptic transistor with a channel length of 1 μm, achieving high classification accuracy of 98.05%.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16655