43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO

43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO

In this study, an oxide semiconductor vertical field‐effect transistor (VFET) was developed and VFETs with a channel length of 0.5 mm on a glass substrate with small variation were successfully fabricated. This technology enables displays to have high resolution and low power consumption compared wi...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.623-626
Hauptverfasser: Nakada, Masataka, Jincho, Masami, Dobashi, Masayoshi, Iguchi, Takahiro, Shima, Yukinori, Koezuka, Junichi, Okazaki, Kenichi, Kusunoki, Koji, Yamazaki, Shunpei
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Sprache:eng
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Zusammenfassung:In this study, an oxide semiconductor vertical field‐effect transistor (VFET) was developed and VFETs with a channel length of 0.5 mm on a glass substrate with small variation were successfully fabricated. This technology enables displays to have high resolution and low power consumption compared with the use of low‐temperature polysilicon.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16635