P‐2: Nitrogen Behaviors in PEALD‐Grown SiO 2 Films Using N 2 O Plasma Reactant and Its Application in ALD‐IZO TFTs

We studied nitrogen (N) behaviors in plasma‐enhanced atomic layer deposition (PEALD)‐grown silicon dioxide (SiO 2 ) using nitrous oxide (N 2 O) plasma reactant. The gradually improved breakdown phenomenon is attributed to N contents. However, although increase in the N contents, excess plasma power is degraded electrical characteristics. For applications of the SiO 2 films using N 2 O plasma reactant, we fabricated indium‐zinc oxide top‐gate thin film transistors with SiO 2 gate insulator (G.I). The stable both transfer characteristics and instability results are originated from decrease in oxygen vacancy in active layer by N 2 O plasma treatment during the G.I deposition.