P‐16: Stacked PECVD SiO 2 Gate Insulators for Top‐Gate Metal Oxide Thin‐Film Transistors in Enhancement Operation Mode

P‐16: Stacked PECVD SiO 2 Gate Insulators for Top‐Gate Metal Oxide Thin‐Film Transistors in Enhancement Operation Mode

This work demonstrated a high‐quality type of stacked PECVD SiO 2 gate insulators for top‐gate metal oxide thin‐film transistors. Moreover, together with work function of gate electrodes, their permeability for hydrogen and oxygen diffusion during post‐annealing process was adopted to effectively mo...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2019-06, Vol.50 (1), p.1271-1274
Hauptverfasser: Deng, Sunbin, Chen, Rongsheng, Li, Guijun, Zhang, Meng, Yeung, Fion Sze Yan, Wong, Man, Kwok, Hoi-Sing
Format: Artikel
Sprache:eng
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Zusammenfassung:This work demonstrated a high‐quality type of stacked PECVD SiO 2 gate insulators for top‐gate metal oxide thin‐film transistors. Moreover, together with work function of gate electrodes, their permeability for hydrogen and oxygen diffusion during post‐annealing process was adopted to effectively modulate threshold voltage, and the enhancement‐mode devices were successfully implemented.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13165