P‐194: Late‐News Poster: Self‐Aligned Double‐Gate Cu‐MIC Poly‐Ge 1‐x Sn x Thin‐Film Transistors on a Glass Substrate

In this study, we fabricated p‐channel (p‐ch) poly‐Ge 1‐x Sn x thin‐film transistors (TFTs) on glass substrates using three key technologies. They are the self‐aligned double‐gate (DG) structure, metal‐induced crystallization using copper (Cu‐MIC), and aluminum‐induced lateral metallization source drain (Al‐LM‐SD). An amorphous Ge 1‐x Sn x film, which was prepared using a sputtering target with x=0.02 and 0.07, was crystallized by Cu MIC at 500 °C, and it was observed that Cu‐MIC enables us to fabricate a high‐quality poly‐Ge 1‐x Sn x thin film. The self‐aligned DG Cu‐MIC p‐ch poly‐Ge 1‐x Sn x TFTs, with x=0.02 and 0.07, achieved mobility of 18 and 25 cm 2 /Vs, respectively. Our proposed p‐ch TFT will facilitate fabrication of hybrid CMOS with n‐ch indium‐gallium‐zinc‐oxide TFT.