P‐158L: Late‐News Poster : Development of A Silicon Process with Device Mobility >500 Cm 2 /V‐Sec Suitable for a Large‐Area Display Backplane Using Embedded Single‐Crystal Silicon Particles

P‐158L: Late‐News Poster : Development of A Silicon Process with Device Mobility >500 Cm 2 /V‐Sec Suitable for a Large‐Area Display Backplane Using Embedded Single‐Crystal Silicon Particles

We report device mobility >500 cm2/V·s in a scalable process suitable for electronic backplanes for large area OLED displays. Ceramic substrates as large as 4×4 inches were fabricated utilizing planarized regions of Single Crystal Silicon (SCS).

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Veröffentlicht in:SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.1334-1336
Hauptverfasser: Chen, Feng, Tarighat, Roohollah Samadzadeh, Hill, Graham, Vieth, John, Sivoththaman, Siva, Dykaar, Douglas R.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report device mobility >500 cm2/V·s in a scalable process suitable for electronic backplanes for large area OLED displays. Ceramic substrates as large as 4×4 inches were fabricated utilizing planarized regions of Single Crystal Silicon (SCS).
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10113