Long Spin Relaxation Times in CVD‐Grown Nanodiamonds
Currently, the primary applications of fluorescent nanodiamonds (FNDs) are in the area of biosensing, by using photoluminescence or spin properties of color centres, mainly represented by the nitrogen vacancy (NV) point defect. The sensitivity of NV‐FNDs to external fields is, however, limited by cr...
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Veröffentlicht in: | Advanced quantum technologies (Online) 2023-12, Vol.6 (12), p.n/a |
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Sprache: | eng |
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Zusammenfassung: | Currently, the primary applications of fluorescent nanodiamonds (FNDs) are in the area of biosensing, by using photoluminescence or spin properties of color centres, mainly represented by the nitrogen vacancy (NV) point defect. The sensitivity of NV‐FNDs to external fields is, however, limited by crystallographic defects, which influence their key quantum state characteristics ‐ the spin longitudinal (T1) and spin transversal (T2) relaxation and coherence times, respectively. This paper reports on utilizing an advanced FND growth technique consisting of heterogeneous nucleation on pre‐engineered sites to create FNDs averaging around 60 nm in size, with mean longitudinal coherence times of 800 μ$\umu$s and a maximum over 1.8 ms, close to bulk theoretical values. This is a major, nearly ten‐fold improvement over commercially available nanodiamonds for the same size range of 50 to 150 nm. Heavy‐N doped nanodiamond shells, important for sensing events in nm proximity to the diamond surface, are fabricated and discussed in terms of re‐nucleation and twinning on {111} crystal facets. The scalability issues are discussed in order to enable the production of FND volumes matching the needs of sensing applications.
On average, an eight‐fold increase in the spin relaxation time is achieved for fluorescent nanodiamonds grown by CVD as compared to commercial HPHT nanodiamonds. The technique is based on heterogeneous diamond nucleation. Also it is able to create a thin NV δ‐doped diamond shell around nanodiamond particle, aimed at sensing applications. |
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ISSN: | 2511-9044 2511-9044 |
DOI: | 10.1002/qute.202300004 |