Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance

Organic memristive devices are promising elements to be used in memory tasks, neuromorphic systems, and bioelectronics as hardware analogs of synapses. Among other materials, small molecules are considered in this field as candidates with more adjustable properties and fine chemical structures. Herein, the first organic memristive device based on benzothieno[3,2‐b][1]‐benzothiophene (BTBT) siloxane dimer is reported. The device resistance programming by voltage pulses with various control parameters is demonstrated: amplitude, frequency, and pulse duty cycle. It is proved that the device has at least four different resistive states in each case. In addition, the device shows 2.5 × 104 cycles of sustainable operation in the endurance test with ROFF/RON ratio exceeding 5. Implementation of the organic memristive device based on benzothieno[3,2‐b][1]‐benzothiophene is reported. The device is controlled by voltage pulses with various control parameters, amplitude, frequency, and pulse duty cycle, showing at least four resistive states in each case. It shows good stability in the endurance test with good ROFF/RON ratio.