Evidence of O‐Polar (000 1 ¯ ) ZnO Surfaces Induced by In Situ Ga Doping

In situ Ga doping during the metal‐organic chemical vapor deposition (MOCVD) growth of Aucatalyzed ZnO nanowires induces the formation of new O‐polar surfaces, demonstrating that crystal facet engineering can be achieved through a modification of surface energies. Nanostructures having opposite polarities are generated: Christmas trees grown along +C (0001) axis exhibit overhangs, while Taipei towers grown along −C (000‐1) axis show terraces. For further details see article number 2000037 by Vincent Sallet et al.