Spin gapless semiconductor like Ti 2 MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti 2 MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti 2 MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti 2 MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti 2 MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)