Mechanical stress effect on the crystallization behavior of Ge 2 Sb 2 Te 5 films studied by electrical resistance measurement

The mechanical stress effect on the crystallization behaviour of Ge 2 Sb 2 Te 5 (GST) thin films is carefully investigated by electrical resistance measurements. It is found that the crystallization temperature of GST films increases as external compressive stress is applied, while the crystallization temperature decreases under tensile stress. We also find that the uneven distribution of extrinsic stress can widen the span of transition temperature. These results clearly demonstrate that mechanical stress plays an important role during the crystallization process of GST films and may further influence the reliability and storage speed of relevant devices. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)