Stress relaxation mechanism in the Si‐SiO 2 system and its influence on the interface properties
The results of the investigation of stress relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stress relaxation mechanisms depend on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si‐ SiO...
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| Veröffentlicht in: | Physica status solidi. C 2016-12, Vol.13 (10-12), p.790-792 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The results of the investigation of stress relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stress relaxation mechanisms depend on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si‐ SiO
2
‐Si
3
N
4
system the stress relaxation by strain occur due to the opposite sign of the thermal expansion coefficient of Si‐SiO
2
and Si
3
N
4
on Si. Laser irradiation allows to modify the system stresses. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
|---|---|
| ISSN: | 1862-6351 1610-1642 |
| DOI: | 10.1002/pssc.201600051 |