Cu 2 SnS 3 thin film solar cells prepared by thermal crystallization of evaporated Cu/Sn precursors in sulfur and tin atmosphere

Cu 2 SnS 3 thin films were prepared by crystallization in sulfur and tin mixing atmosphere from the stacked Cu/Sn precursors deposited by sequential evaporation of Sn and Cu elements. From EPMA analysis, the composition of the thin film was approximately constant regardless changing Sn mole ratio in...

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Veröffentlicht in:Physica status solidi. C 2015-06, Vol.12 (6), p.761-764
Hauptverfasser: Nakashima, M., Yamaguchi, T., Itani, H., Sasano, J., Izaki, M.
Format: Artikel
Sprache:eng
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Zusammenfassung:Cu 2 SnS 3 thin films were prepared by crystallization in sulfur and tin mixing atmosphere from the stacked Cu/Sn precursors deposited by sequential evaporation of Sn and Cu elements. From EPMA analysis, the composition of the thin film was approximately constant regardless changing Sn mole ratio in the precursor. However, the composition of inside of the thin films and Mo layer had gradation. The Raman analysis showed that the spectrum corresponded to monoclinic Cu 2 SnS 3 . Cu 2 SnS 3 thin films were applied to the fabrication of Cu 2 SnS 3 solar cells. The values of V oc and I sc increased with decreasing Sn mole ratio in the precursor. The largest V oc of 247.5 mV was achieved in sample of Cu/Sn mole ratio of 2/1.2, which is comparable with early reported value of V oc . (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201400269