Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

We have grown InGaN nanowires (NWs) on a (111)Si substrate directly by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE), and investigated their In compositional distribution by energy dispersive x‐ray spectroscopy (EDX). The In composition line profiles of InGaN NWs measured by EDX are different at each position in the InGaN NWs, and In is most easily incorporated into the top of NWs. The In composition at the top of the NWs depends on the growth temperature and the In flux ratio. However, the In compositions at other positions is not dependent on these factors. Thus, these results might be due to the limited diffusion of In atoms from the top of the NWs towards the NWs/Si interface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)