Fabrication and properties of etched GaN nanorods

Fabrication and properties of etched GaN nanorods

Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift‐off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near‐vertical sidewalls. Such top‐down etched nanorod arrays h...

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Veröffentlicht in:Physica status solidi. C 2012-03, Vol.9 (3-4), p.631-634
Hauptverfasser: Shields, Philip, Hugues, Maxime, Zúñiga-Pérez, Jesus, Cooke, Mike, Dineen, Mark, Wang, Wang, Causa, Federica, Allsopp, Duncan
Format: Artikel
Sprache:eng
Schlagworte:
dry etching
GaN
lift-off
nanocolumns
nanoimprint lithography
nanorods
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Zusammenfassung:Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift‐off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near‐vertical sidewalls. Such top‐down etched nanorod arrays have greater uniformity when compared to bottom‐up arrays, with the process already having been demonstrated on 4‐inch wafers. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201100394