Photomodulation reflectance study of temperature dependence of the band gap of ZnSe 1‐ x O x

Photomodulation reflectance study of temperature dependence of the band gap of ZnSe 1‐ x O x

We investigated the band gap of ZnSe 1‐ x O x alloys ( x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe 1‐ x O x exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained...

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Veröffentlicht in:Physica status solidi. C 2012-01, Vol.9 (2), p.187-189
Hauptverfasser: Chen, Wen‐Yen, Lai, Chi‐Wen, Cheng, Chao‐Chia, Chen, Cheng‐Yu, Chyi, Jen‐Inn, Hsu, Tzu‐Min
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Sprache:eng
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Zusammenfassung:We investigated the band gap of ZnSe 1‐ x O x alloys ( x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe 1‐ x O x exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201100288