Growth of semipolar {10$ bar 1 $1} GaN from c -plane-like sapphire sidewall of patterned n -plane sapphire substrate

The direct growth of semipolar {10$ \bar 1 $1} GaN via metalorganic vapor phase epitaxy has been demonstrated using a patterned n ‐plane sapphire substrate with a c ‐plane‐like sidewall and terrace covered with a SiO2 mask. From X‐ray diffraction analysis, it was clear that a uniformly oriented {10$ \bar 1 $1} GaN layer was obtained. Scanning electron microscopy and atomic force microscopy measurements showed a flat surface morphology. The root‐mean‐square value of the {10$ \bar 1 $1} GaN layer is 0.7 nm over a 5 × 5 μm2 area. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)